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Information
| Code | FK594 |
| Name | Monte Carlo Simulation of Semiconductor Devices |
| Semester | . Semester |
| Duration (T+A) | 3-0 (T-A) (17 Week) |
| ECTS | 6 ECTS |
| National Credit | 3 National Credit |
| Teaching Language | Türkçe |
| Level | Doktora Dersi |
| Type | Normal |
| Mode of study | Yüz Yüze Öğretim |
| Catalog Information Coordinator | Prof. Dr. METİN ÖZDEMİR |
Course Goal
To study the calculation of scattering rates of electrons inside a crystal. A short introduction random number generation and Monte Carlo methods. By applying the scattering rates to MC methods, electron transport properties in solids will be studied.
Course Content
Perturbation theory, Fermi's golden rule; calculation of electron scattering for crystaşls in 3D: acoustic, optic and ionic scatterings; calculation of scattering rates for two dimensional electron gas in 2D: randem numbers, their generation and tests; Scattering rates and Monte Carlo methods; calculation of electron transport properties for certain semiconductors.
Course Precondition
none
Resources
Numerical Simulation of Submicron Semiconductor Devices, Kazutaka Tomizawa, Artech House Materials Science Library
Notes
Computer programs provided in lectures.
Course Learning Outcomes
| Order | Course Learning Outcomes |
|---|---|
| LO01 | Understands time dependent perturbation theory. |
| LO02 | Uses Fermi's golden rule. |
| LO03 | Understands and uses the dispersion relation for acoustic and optic phonons |
| LO04 | Realizes how to calculate the density of states in 2 and 3 dimensions. |
| LO05 | Becomes aware of energy band structure of semiconductors. |
| LO06 | Understands how to calculate acoustic and optic scattering rates in 3D. |
| LO07 | Understands how to calculate ionic scattering rates in 3D. |
| LO08 | Understands how to calculate acoustic, optic and ionic scattering scattering rates in 2D. |
| LO09 | Becomes aware of random numbers and their relation with Monte Carlo Methods. |
| LO10 | Understands how to apply Monte Carlo methods to scattering rates |
| LO11 | Understands and knows how to apply the semi-classical equations of motion for electrons to MC methods. |
| LO12 | Becomes aware of how to construct flow chart diagrams for computer programs to be written for electron transport simulation, writes programs, compile and run them. |
| LO13 | Understands how to make semiconductor device simulation. |
Relation with Program Learning Outcome
| Order | Type | Program Learning Outcomes | Level |
|---|---|---|---|
| PLO01 | Bilgi - Kuramsal, Olgusal | Based on the qualifications of the MA level, develops and deepens the current and advanced knowledge in the area by unique means of thinking and / or research at mastery level and comes up with original definitions which bring about novelty to the physics area. | |
| PLO02 | Bilgi - Kuramsal, Olgusal | Use the equipment used in the field. | |
| PLO03 | Bilgi - Kuramsal, Olgusal | Gain experience on experimental measurements and their graphical representation with appropriate units and accuracy | |
| PLO04 | Bilgi - Kuramsal, Olgusal | Interpret observational and experimental results. | 3 |
| PLO05 | Bilgi - Kuramsal, Olgusal | Deduce from sources which are obtained by research during the process of preparing proficiency exam. | 3 |
| PLO06 | Bilgi - Kuramsal, Olgusal | Interpret information in their field written and oral | 3 |
| PLO07 | Bilgi - Kuramsal, Olgusal | Demonstrate the knowledge of appropriate mathematical techniques used in physics. | 3 |
| PLO08 | Bilgi - Kuramsal, Olgusal | Has a knowledge about the logic of scientific research. | 3 |
| PLO09 | Bilgi - Kuramsal, Olgusal | Makes use of the conceptual and practical knowledge acquired in the physics field at mastery level. | 3 |
| PLO10 | Bilgi - Kuramsal, Olgusal | Has attained advanced skills to apply research methods in studies related with the physics area. | 5 |
| PLO11 | Bilgi - Kuramsal, Olgusal | Develops a scientific method that brings innovation to science. | 2 |
| PLO12 | Bilgi - Kuramsal, Olgusal | Performs the critical analysis, synthesis and evaluation of new and complicated thought. | 3 |
| PLO13 | Bilgi - Kuramsal, Olgusal | Can demonstrate the ability to perform an independent research in a specific issue related to physics. | 3 |
| PLO14 | Bilgi - Kuramsal, Olgusal | Acts as a leader in environments where it is necessary to solve original and interdisciplinary problems. | 3 |
| PLO15 | Bilgi - Kuramsal, Olgusal | To keep track of the developments in physics and updates himself/herself invariably. | 3 |
| PLO16 | Bilgi - Kuramsal, Olgusal | Can calculate the predictions of a physical theory and compare with the experimental results. | 4 |
| PLO17 | Bilgi - Kuramsal, Olgusal | Comprehends the interdisciplinary interaction with which the physics area is related. | 2 |
| PLO18 | Bilgi - Kuramsal, Olgusal | Shares his/her ideas and suggestions for solutions to the physical problems with experts and non-experts by supporting them with quantitative and qualitative data. | 2 |
| PLO19 | Bilgi - Kuramsal, Olgusal | Can develop original solutions to physical problems. | 4 |
| PLO20 | Bilgi - Kuramsal, Olgusal | Can prepare a scientific article and can publish scientific articles about his/her field in international refereed journals. | 3 |
Week Plan
| Week | Topic | Preparation | Methods |
|---|---|---|---|
| 1 | A general review of energy band diagrams of semiconductors and phonon dispersion relations | Study the relevant section(s) in the textbook | Öğretim Yöntemleri: Anlatım, Soru-Cevap, Tartışma |
| 2 | Time dependent perturbation theory | Study the relevant section(s) in the textbook | Öğretim Yöntemleri: Anlatım, Soru-Cevap |
| 3 | Fermi's golden rule, scattering rates | Study the relevant section(s) in the textbook | Öğretim Yöntemleri: Anlatım, Soru-Cevap |
| 4 | Ionic scattering, 3D | Study the relevant section(s) in the textbook | Öğretim Yöntemleri: Anlatım, Soru-Cevap |
| 5 | Phonon scattering | Study the relevant section(s) in the textbook | Öğretim Yöntemleri: Anlatım, Soru-Cevap |
| 6 | Phonon scattering (cont'd) | Study the relevant section(s) in the textbook | Öğretim Yöntemleri: Anlatım, Alıştırma ve Uygulama, Bireysel Çalışma |
| 7 | Scattering rates in 2D | Study the relevant section(s) in the textbook | Öğretim Yöntemleri: Anlatım, Bireysel Çalışma, Problem Çözme |
| 8 | Mid-Term Exam | mid-term exam | Ölçme Yöntemleri: Yazılı Sınav |
| 9 | Scattering rates in 2D (cont'd) | Study the relevant section(s) in the textbook | Öğretim Yöntemleri: Anlatım, Soru-Cevap, Alıştırma ve Uygulama |
| 10 | The relation between MC methods and scattering rates | Study the relevant section(s) in the textbook | Öğretim Yöntemleri: Anlatım, Soru-Cevap |
| 11 | Semi-classical equations of motion for electrons, MC methods | Study the relevant section(s) in the textbook | Öğretim Yöntemleri: Anlatım, Soru-Cevap, Alıştırma ve Uygulama |
| 12 | Simulation of electron transport in Si | Study the relevant section(s) in the textbook | Öğretim Yöntemleri: Anlatım, Deney / Laboratuvar, Bireysel Çalışma |
| 13 | Simulation of electron transport in GaAs | Study the relevant section(s) in the textbook | Öğretim Yöntemleri: Anlatım, Soru-Cevap, Deney / Laboratuvar, Bireysel Çalışma |
| 14 | Diode simulation | Study the relevant section(s) in the textbook | Öğretim Yöntemleri: Anlatım, Soru-Cevap, Deney / Laboratuvar, Bireysel Çalışma |
| 15 | Two dimensional electron gas simulation | Study the relevant section(s) in the textbook | Öğretim Yöntemleri: Anlatım, Soru-Cevap, Deney / Laboratuvar, Bireysel Çalışma |
| 16 | Term Exams | Ölçme Yöntemleri: Yazılı Sınav |
|
| 17 | Term Exams | Ölçme Yöntemleri: Yazılı Sınav |
Student Workload - ECTS
| Works | Number | Time (Hour) | Workload (Hour) |
|---|---|---|---|
| Course Related Works | |||
| Class Time (Exam weeks are excluded) | 14 | 3 | 42 |
| Out of Class Study (Preliminary Work, Practice) | 14 | 5 | 70 |
| Assesment Related Works | |||
| Homeworks, Projects, Others | 0 | 0 | 0 |
| Mid-term Exams (Written, Oral, etc.) | 1 | 15 | 15 |
| Final Exam | 1 | 30 | 30 |
| Total Workload (Hour) | 157 | ||
| Total Workload / 25 (h) | 6,28 | ||
| ECTS | 6 ECTS | ||